absolute maximum ratings parameter units i d @ v gs = 10v, t c = 25c continuous drain current 35* i d @ v gs = 10v, t c = 100c continuous drain current 28 i dm pulsed drain current 140 p d @ t c = 25c max. power dissipation 250 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 700 mj i ar avalanche current 35 a e ar repetitive avalanche energy 25 mj dv/dt peak d iode recovery dv/dt 4.3 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in.(1.6mm) from case for 10s) weight 9.3 (t ypical) g hexfet ? mosfet technology is the key to international rectifier?s advanced line of power mosfet transistors. the efficient geometry design achieves very low on- state resistance combined with high transconductance. hexfet transistors also feature all of the well- established advantages of mosfets, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. they are well- suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. the hexfet transistor?s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. this improves thermal efficiency and reduces drain capacitance. o c a power mosfet thru-hole (to-254aa) www.irf.com 1 to-254aa product summary part number r ds(on) i d IRFM260 0.060 ? 35a* features: simple drive requirements ease of paralleling hermetically sealed electrically isolated dynamic dv/dt rating light-weight for footnotes refer to the last page IRFM260 200v, n-channel hexfet ? mosfet technology * current is limited by package pd - 91388c
IRFM260 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 200 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.24 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.060 v gs = 10v, i d = 28a resistance ? ? 0.068 v gs = 10v, i d = 35a v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 22 ? ? s ( )v ds > 15v, i ds = 28a i dss zero gate voltage drain current ? ? 25 v ds = 160v ,v gs =0v ? ? 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 230 v gs =10v, i d = 35a q gs gate-to-source charge ? ? 40 nc v ds = 100v q gd gate-to-drain (?miller?) charge ? ? 110 t d (on) turn-on delay time ? ? 29 v dd = 100v, i d = 35a, t r rise time ? ? 120 v gs =10v, r g = 2.35 ? t d (off) turn-off delay time ? ? 110 t f fall time ? ? 92 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 5100 ? v gs = 0v, v ds = 25v c oss output capacitance ? 1100 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 280 ? na ? nh ns a note: corresponding spice and saber models are available on international rectifier website. for footnotes refer to the last page thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 0.50 r thjcs case-to-sink ? 0.21 ? r thja junction-to-ambient ? ? 48 typi cal socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 35* i sm pulse source current (body diode) ? ? 140 v sd diode forward voltage ? ? 1.8 v t j = 25c, i s = 35a, v gs = 0v t rr reverse recovery time ? ? 420 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge ? ? 4.9 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a ? measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) * current is limited by package
www.irf.com 3 IRFM260 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 25c c a 4.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 150c a 4.5v j 1 10 100 1000 45678910 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) v = 50v 20s pulse width ds a 0.0 0.5 1.0 1.5 2.0 2.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 46a d
IRFM260 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2000 4000 6000 8000 10000 12000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 50 100 150 200 250 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 i = 35a v = 160v v = 100v v = 40v d ds ds ds 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s
www.irf.com 5 IRFM260 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %
+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0 10 20 30 40 50 25 50 75 100 125 150 c i , drain current (amps) d t , case temperature (c) a limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 single pulse (thermal response) a thermal response (z ) p t 2 1 t dm notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c
IRFM260 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circui t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 10 . 0 400 800 1200 1600 25 50 75 100 125 150 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top 16a 22a bottom 35a d v gs
www.irf.com 7 IRFM260 i sd 35a, di/dt 130a/ s, v dd 200v, t j 150c pulse width 300 s; duty cycle 2% repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 1.3mh peak i l = 35a, v gs = 10v footnotes: case outline and dimensions ? to-254aa 3.81 [.150] 0.12 [.005] 1.27 [.050] 1.02 [.040] 6.60 [.260] 6.32 [.249] c 14.48 [.570] 12.95 [.510] 3x 0.36 [.014] b a 1.14 [.045] 0.89 [.035] 2x 3.81 [.150] 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 17.40 [.685] 16.89 [.665] a 123 13.84 [.545] 13.59 [.535] 0.84 [.033] max. b 2. all dimensions are shown in millimeters [inches]. 1. dimensioning & tolerancing per asme y14.5m-1994. 4. conforms to jedec outline to-254aa. 3. controlling dimension: inch. not es : pin assignments 1 = drain 2 = source 3 = gate caution beryllia warning per mil-prf-19500 package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 01/2007
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